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TYN410RG

STMicroelectronics
Part Number TYN410RG
Manufacturer STMicroelectronics
Description 10A SCR
Published May 19, 2015
Detailed Description ® STANDARD Table 1: Main Features Symbol Value IT(RMS) 10 VDRM/VRRM 400, 600 and 800 IGT 15 Unit A V mA TYNx...
Datasheet PDF File TYN410RG PDF File

TYN410RG
TYN410RG

Overview
® STANDARD Table 1: Main Features Symbol Value IT(RMS) 10 VDRM/VRRM 400, 600 and 800 IGT 15 Unit A V mA TYNx10 Series 10A SCR A G K A DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load.
K A G TO-220AB Table 2: Order Codes Part Numbers TYN410RG TYN610RG TYN810RG Marking TYN410 TYN610 TYN810 Table 3: Absolute Ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C IT(AV) Average on-state current (180° conduction angle) Tc = 100°C ITSM Non repetitive surge peak on-state current tp = 8.
3 ms tp = 10 ms Tj = 25°C I²t I²t Value for fusing tp = 10 ms Tj = 25°C dI/dt Critical rate of rise of on-state current IG = 100 mA , dIG/dt = 0.
1 A/µs Tj = 125°C IGM Peak gate current tp = 20 µs Tj = 125°C PG(AV) Average gate power dissipation Tj = 125°C PGM Maximum gate power tp = 20 µs Tj = 125°C VDRM VRRM Repetitive peak off-state voltage TYN410 TYN610 TYN810 Tj = 125°C Tstg Storage junction temperature range Tj Operating junction temperature range TL Maximum lead temperature for soldering during 10s at 2mm from case Value 10 6.
4 105 100 50 50 4 1 10 400 600 800 - 40 to + 150 - 40 to + 125 260 Unit A A A A2S A/µs A W W V °C °C February 2006 REV.
2 1/6 TYNx10 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol Test Conditions IGT VGT VD = 12 V (D.
C.
) RL = 33 Ω MAX.
MAX.
VGD VD = VDRM RL = 3.
3 kΩ Tj = 110°C MIN.
tgt VD = VDRM IG = 40 mA dIG/dt = 0.
5 A/µs TYP.
IH IT = 100 mA Gate open MAX.
IL IG = 1.
2 x IGT TYP.
dV/dt Linear slope up to: VD = 67 % VDRM Gate open Tj = 110°C MIN.
VTM ITM = 20 A tp = 380 µs MAX.
IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 110°C MAX.
tq VD = 67 % VDRM dITM/dt = 30 A/µs ITM = 20 A VR = 25 V dVD/dt = 50 V/µs Tj = 110°C TYP.
Tab...


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