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IPP80N04S2L-03

Infineon Technologies
Part Number IPP80N04S2L-03
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet PDF File IPP80N04S2L-03 PDF File

IPP80N04S2L-03
IPP80N04S2L-03

Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S2L-03 IPP80N04S2L-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.
1 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N04S2L-03 IPP80N04S2L-03 Package Ordering Code Marking PG-TO263-3-2 SP0002-20158 2N04L03 PG-TO220-3-1 SP0002-19063 2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D=80A V GS P tot T C=25 °C T j, T stg Value 80 80 320 810 ±20 300 -55 .
.
.
+175 Unit A mJ V W °C Rev.
1.
0 page 1 2006-03-02 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) IPB80N04S2L-03 IPP80N04S2L-03 min.
Values typ.
Unit max.
- - 0.
5 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=250 µA 40 1.
2 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance I DSS I GSS V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=80 A - - 1.
6 0.
01 1 1 3.
6 -V 2.
0 1 µA 100 100 nA 4.
5 mΩ V GS=4.
5 V, I D=80 A, SMD version - 3.
3 4.
2 Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 2.
7 3.
4 mΩ V GS=10 V, I D=80 A, SMD version - 2.
4 3.
1 Rev.
1.
0 page 2 2006-03-02 Parameter Sy...


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