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IPD250N06N3G

Infineon Technologies
Part Number IPD250N06N3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology ...
Datasheet PDF File IPD250N06N3G PDF File

IPD250N06N3G
IPD250N06N3G


Overview
Type OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications Type IPD250N06N3 G Product Summary V DS R DS(on),max ID IPD250N06N3 G 60 V 25 mΩ 28 A Package Marking PG-TO252-3 250N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse3) E AS Gate source voltage V GS 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C I D=20 A, R GS=25 Ω Value 28 20 112 13 ±20 Unit A mJ V Rev.
2.
0 page 1 2008-11-26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 IPD250N06N3 G Value 36 -55 .
.
.
175 55/175/56 Unit W °C Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area4) - - 4.
2 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=11 µA I DSS V DS=60 V, V GS=0 V, T j=25 °C 60 2 - 3 0.
1 -V 4 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current Drain-source on-state resistance Gate resistance I GSS R DS(on) RG V GS=20 V, V DS=0 V V GS=10 V, I D=28 A - 10 100 nA - 20.
7 25 mΩ - 0.
9 - Ω Transconductance g fs |V DS|>2|I D|R DS(on...


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