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IPP80N06S2L-06

Infineon Technologies
Part Number IPP80N06S2L-06
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up ...
Datasheet PDF File IPP80N06S2L-06 PDF File

IPP80N06S2L-06
IPP80N06S2L-06

Overview
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-06 IPP80N06S2L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 6.
3 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2L-06 IPP80N06S2L-06 Package Ordering Code Marking PG-TO263-3-2 SP0002-18163 2N06L06 PG-TO220-3-1 SP0002-18824 2N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) Power dissipation Operating and storage temperature I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) I D,pulse T C=25 °C E AS I D= 80 A V GS P tot T C=25 °C T j, T stg Value 80 80 320 530 ±20 250 -55 .
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+175 Unit A mJ V W °C Rev.
1.
0 page 1 2006-03-13 Parameter Symbol Conditions The...


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