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IPB70N10SL-16

Infineon Technologies

Power-Transistor

SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche ...


IPB70N10SL-16

Infineon Technologies


Octopart Stock #: O-919256

Findchips Stock #: 919256-F

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Description
SIPMOS Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Package (lead free) P-TO262-3-1 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 P-TO263-3-2 Product Summary VDS 100 V RDS(on) 16 mΩ ID 70 A P-TO220-3-1 2 P-TO220-3-1 23 1 Type IPP70N10SL-16 IPB7
More View 0N10SL-16 IPI70N10SL-16 Package PG-TO220-3-1 PG-TO263-3-2 PG-TO262-3-1 Ordering Code SP0002-25708 SP0002-25700 SP000225705 Marking N10L16 N10L16 N10L-16 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=70 A , VDD=25V, RGS=25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt ID puls EAS EAR dv/dt IS=70A, VDS=0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Page 1 Value 70 50 280 Unit A 700 mJ 25 6 kV/µs ±20 V 250 W -55... +175 55/175/56 °C 2006-02-14 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Symbol Values Unit min. typ. max. RthJC RthJA RthJA - - 0.6 K/W - - 62.5 - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage V(BR)DSS 100 VGS=0V, ID=2mA Gate threshold voltage, VGS = VDS VGS(th) 1.2 ID = 2 mA Zero gate voltage drain current VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=150°C Gate-source leakage current IDSS IGSS - VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - VGS=4.5V, ID=50A Drain-source on-state resistance RDS(on) - VGS=10V, ID =50A Values typ. - 1.6 0.1 10 14 10 max. 2 1 100 100 25 16 Unit V µA nA mΩ 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, 30 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf ID =50A VGS=0V, VDS=25V, f=1MHz VDD=50V, VGS=4.5V, ID=70A, RG=1.3Ω - Values typ. 65 3630 640 345 70 250 250 95 max. - 4540 800 430 105 375 375 145 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs VDD=80V,






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