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IPP70N10S3L-12

Infineon Technologies
Part Number IPP70N10S3L-12
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File IPP70N10S3L-12 PDF File

IPP70N10S3L-12
IPP70N10S3L-12

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 12 mW 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3L-12 IPI70N10S3L-12 IPP70N10S3L-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N10L12 3N10L12 3N10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25 °C I D=35A Avalanche current, single pulse Gate source voltage2) I AS V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 70 48 280 410 70 ±20 ...


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