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IPI100N10S3-05

Infineon Technologies
Part Number IPI100N10S3-05
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 20, 2015
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File IPI100N10S3-05 PDF File

IPI100N10S3-05
IPI100N10S3-05

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Product Summary V DS R DS(on),max (SMD version) ID 100 V 4.
8 mΩ 100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N10S3-05 IPI100N10S3-05 IPP100N10S3-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN1005 3PN1005 3PN1005 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 100 100 400 1445 100 ±20 300 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
0 page 1 2008-02-11 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.
5 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=240µA 2.
0 3.
0 4.
0 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.
01 1 µA Gate-source leakage current Drain-source on-state resistance V DS=80 V, V GS=0 V, T j=125 °C2) I GSS V GS=20V, V DS=0V R DS(on) V GS=10V, I D=100A - - 1 100 - 100 nA 4.
3 5.
1 mΩ V GS=10V, I D=100A, SMD version - 4.
0 4.
8 Rev.
1.
0 page 2 2008-02-11 Paramet...


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