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AON7934

Alpha & Omega Semiconductors
Part Number AON7934
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual Asymmetric N-Channel MOSFET
Published May 21, 2015
Detailed Description AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology ...
Datasheet PDF File AON7934 PDF File

AON7934
AON7934

Overview
AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.
5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) Q1 30V 16A <10.
2mΩ <15.
8mΩ Q2 30V 18A <7.
7mΩ <11.
6mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Power DFN3x3A Top View Bottom View G2 S2 S2 S2 (S1/D2) D1 Top View Bottom View D1 G1 D1 D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.
05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 ±20 ±20 16 18 12 14 64 72 13 15 7.
8 9 19 25 3.
0 4.
1 36 36 23 25 9 10 2.
5 2.
5 0.
9 0.
9 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 40 70 4.
5 Max Q1 50 90 5.
4 Typ Q2 40 70 4.
2 Max Q2 50 90 5 Units °C/W °C/W °C/W Rev0 : April 2012 www.
aosmd.
com Page 1 of 10 AON7934 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, ID=13A VGS=4.
5V, ID=10A ...


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