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NCE2008E

Part Number	NCE2008E
Manufacturer	NCE Power Semiconductor
Description	NCE N-Channel Enhancement Mode Power MOSFET
Published	May 22, 2015
Detailed Description	http://www.ncepower.com Pb Free Product NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E ...
Datasheet	NCE2008E PDF File

Overview

http://www.
ncepower.
com Pb Free Product NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.
5V RDS(ON) < 24mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● PWM application ● Load switch TSSOP-8 top view Package Marking and Ordering Informati...

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