DatasheetsPDF.com

IPB120N04S4-01

Infineon

Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...


IPB120N04S4-01

Infineon


Octopart Stock #: O-919450

Findchips Stock #: 919450-F

Web ViewView IPB120N04S4-01 Datasheet

File DownloadDownload IPB120N04S4-01 PDF File




Description
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Product Summary V DS R DS(on),max (SMD version) ID 40 V 1.5 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG
More View -TO220-3-1 Type IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0401 4N0401 4N0401 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 120 480 750 120 ±20 188 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2010-04-12 IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 0.8 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=140µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V - 0.06 1 µA V DS=18V, V GS=0V, T j=85°C2) - 1 20 Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A - - 100 nA - 1.70 1.9 mΩ V GS=10V, I D=100A, SMD version - 1.35 1.5 Rev. 1.0 page 2 2010-04-12 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Conditions min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=120A, R G=3.5Ω - 10770 14000 pF - 2450 3150 - 82 189 - 34 - ns - 16 - 41 - 36 - Q gs - 57 74 nC Q gd V DD=32V, I D=120A, - 18 41 Q g V GS=0 to 10V - 135 176 V plateau - 5.3 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=100A, T j=25°C t rr V R=20V, I F=50A, di F/dt =100A/µs - - 120 A - - 480 - 0.9 1






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)