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IPP120N04S4-01

Infineon
Part Number IPP120N04S4-01
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPP120N04S4-01 PDF File

IPP120N04S4-01
IPP120N04S4-01

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Product Summary V DS R DS(on),max (SMD version) ID 40 V 1.
5 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0401 4N0401 4N0401 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 120 120 480 750 120 ±20 188 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C Rev.
1.
0 page 1 2010-04-12 IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 0.
8 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=140µA 2.
0 3.
0 4.
0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V - 0.
06 1 µA V DS=18V, V GS=0V, T j=85°C2) - 1 20 Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A - - 100 nA - 1.
70 1.
9 mΩ V GS=10V, I D=100A, SMD version - 1.
35 1.
5 Rev.
1.
0 page 2 2010-04-12 Parameter Dynamic characteristics2) Inpu...


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