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IPB160N04S4-H1

Infineon
Part Number IPB160N04S4-H1
Manufacturer Infineon
Description Power-Transistor
Published May 23, 2015
Detailed Description IPB160N04S4-H1 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPB160N04S4-H1 PDF File

IPB160N04S4-H1
IPB160N04S4-H1

Overview
IPB160N04S4-H1 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 1.
6 mW 160 A PG-TO263-7-3 Type IPB160N04S4-H1 Package PG-TO263-7-3 Marking 4N04H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Avalanche current, single pulse I AS - Gate source voltage V GS - Powe...


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