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IPD90N06S4L-06

Infineon
Part Number IPD90N06S4L-06
Manufacturer Infineon
Description Power-Transistor
Published May 27, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
Datasheet PDF File IPD90N06S4L-06 PDF File

IPD90N06S4L-06
IPD90N06S4L-06

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon IPD90N06S4L-06 Product Summary V DS R DS(on),max ID 60 V 6.
3 mΩ 90 A PG-TO252-3-11 Type IPD90N06S4L-06 Package Marking PG-TO252-3-11 4N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 63 360 67 90 ±16 79 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C − Rev.
1.
0 page 1 2009-03-24 IPD90N06S4L-06 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min.
Values typ.
Unit max.
- - 1.
9 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=40µA I DSS V DS=60V, V GS=0V, T j=25°C V DS=60V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.
5V, I D=45A V GS=10V, I D=90A 60 - -V 1.
2 1.
7 2.
2 - 0.
01 1 µA - 5 100 - - 100 nA - 7.
4 11.
0 mΩ - 5.
0 6.
3 Rev.
1.
0 page 2 2009-03-24 IPD90N06S4L-06 Parameter Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate cha...


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