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NCE6005S

NCE Power
Part Number NCE6005S
Manufacturer NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 28, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE6005S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005S ...
Datasheet PDF File NCE6005S PDF File

NCE6005S
NCE6005S

Overview
http://www.
ncepower.
com Pb Free Product NCE6005S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =60V,ID =4.
5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% ΔVds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 6005 NCE6005S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA Limit 60 ±20 4.
5 3.
0 20 2 -55 To 150 62.
5 Unit V V A A A W ℃ ℃/W Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) IDSS VDS=60V,VGS=0V IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.
5A Forward Transconductance Dynamic Characteristics (Note4) gFS VDS=5V,ID=4.
5A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Clss Coss Crss VD...


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