DatasheetsPDF.com

NCE60H10

NCE Power
Part Number NCE60H10
Manufacturer NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 28, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 ...
Datasheet PDF File NCE60H10 PDF File

NCE60H10
NCE60H10

Overview
http://www.
ncepower.
com Pb Free Product NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Feature ● VDS =60V,ID =100A RDS(ON) < 6.
5mΩ @ VGS=10V (Typ:5.
7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE60H10 NCE60H10 TO-220-3L Reel Size - Tape width - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current IDM Limit 60 ±20 100 70 320 Quantity - Unit V V A A A Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE60H10 Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range PD EAS TJ,TSTG 170 1.
13 550 -55 To 175 W W/℃ mJ ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJc 0.
88 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=60V,VGS=0V VGS=±20V,VDS=0V 60 65 - -- 1 - - ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resis...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)