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NCE7075K

NCE Power
Part Number NCE7075K
Manufacturer NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Published May 28, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE7075K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7075K ...
Datasheet PDF File NCE7075K PDF File

NCE7075K
NCE7075K

Overview
http://www.
ncepower.
com Pb Free Product NCE7075K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE7075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =70V,ID =75A RDS(ON) < 12mΩ @ VGS=10V (Typ:9.
5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE7075K NCE7075K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 70 ±20 75 50 300 110 0.
73 450 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
1 http://www.
ncepower.
com Pb Free Product NCE7075K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
36 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 70 - - V Zero Gate Voltage Drain Current IDSS VDS=70V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA...


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