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IPP80P04P4L-06

Infineon
Part Number IPP80P04P4L-06
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS®-P2 Power-Transistor Features • P-channel - Lo...
Datasheet PDF File IPP80P04P4L-06 PDF File

IPP80P04P4L-06
IPP80P04P4L-06

Overview
Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary V DS R DS(on) (SMD Version) ID -40 V 6.
4 mW -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P04P4L-06 IPI80P04P4L-06 IPP80P04P4L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P04L06 4P04L06 4P04L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev.
1.
0 page 1 Value -80 -68 -320 31 -80 ±163) 88 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C 2011-02-14 Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - minimal footprint 6 cm2 cooling area4) - - 1.
7 K/W - 62 - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -1mA -40 - -V V GS(th) V DS=V GS, I D=-150µA -1.
2 -1.
7 -2.
2 I DSS V DS=-32V, V GS=0V, T j=25°C - -0.
05 -1 µA V DS=-32V, V GS=0V, T j=125°C2) - -20 -200 I GSS V GS=-16V, V DS=0V - - -100 nA R DS(on) V GS=-4.
5V, I D=-50A - 8.
2 10.
8 mW V GS=-4.
5V, I D=-50A, SMD version ...


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