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IPB80P03P4L-07

Infineon
Part Number IPB80P03P4L-07
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C pe...
Datasheet PDF File IPB80P03P4L-07 PDF File

IPB80P03P4L-07
IPB80P03P4L-07

Overview
OptiMOS®-P2 Power-Transistor Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 Product Summary V DS R DS(on) (SMD Version) ID -30 V 6.
9 mΩ -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P03L07 4P03L07 4P03L07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - ...


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