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IPB180P04P4L-02

Infineon
Part Number IPB180P04P4L-02
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description Final Data Sheet IPB180P04P4L-02 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -40 V 2.4 mW -180...
Datasheet PDF File IPB180P04P4L-02 PDF File

IPB180P04P4L-02
IPB180P04P4L-02

Overview
Final Data Sheet IPB180P04P4L-02 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -40 V 2.
4 mW -180 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type IPB180P04P4L-02 Package PG-TO263-7-3 Marking 4QP04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D= -90A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - PG-TO263-7-3 Gate Pin 1 Drain Pin 4, Tab Source Pin 2, 3, 5, 6, 7 Value -180 -140 -720 84 -180 ±163) 150 -55 .
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+175 55/175/...


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