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IPD60N10S4-12

Infineon
Part Number IPD60N10S4-12
Manufacturer Infineon
Description Power-Transistor
Published May 29, 2015
Detailed Description OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPD60N10S4-12 PDF File

IPD60N10S4-12
IPD60N10S4-12

Overview
OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.
2 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4-12 Package Marking PG-TO252-3-313 4N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=30A I AS - V GS - P tot T C=25°C T j, T stg - Value 60 43 240 120 40 ±20 94 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2014-06-30 Preliminary IPD60N10S4-12 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area2) min.
Values typ.
Unit max.
- - 1.
6 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=46µA 2.
0 2.
7 3.
5 Zero gate voltage drain current I DSS V DS=100V, V GS=0V - 0.
01 1 µA V DS=100V, V GS=0V, T j=125°C2) - 1 100 Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=60A - 10.
4 12.
2 mW Rev.
1.
0 page 2 2014-06-30 Preliminary IPD60N10S4-12 Parameter Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge to...


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