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2SK1310A

Part Number	2SK1310A
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	May 29, 2015
Detailed Description	2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRAN...
Datasheet	2SK1310A PDF File

Overview

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.
) z Drain Efficiency : ηD = 65% (Typ.
) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC — temperature/current/voltage and the si...

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