DatasheetsPDF.com

K1310A

Toshiba Semiconductor
Part Number K1310A
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published May 29, 2015
Detailed Description 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRAN...
Datasheet PDF File K1310A PDF File

K1310A
K1310A

Overview
2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.
) z Drain Efficiency : ηD = 65% (Typ.
) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC — temperature/current/voltage and the significant change in EIAJ — temperature, etc.
) may cause this product to decrease in the TOSHIBA 2−22C2A reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum Weight: 17.
5 g ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2007-11-01 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Drain-Source ON Resistance Drain-Source ON Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Po ηD V (BR) DSS IDSS Vth RDS (on) VDS (on) |Yfs| Ciss Coss Crss VDD = 50 V, Iidle = 0.
2 A × 2 Pi = 10 W, f = 230 MHz * ID = 10 mA, VGS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V ** ID = 4 A, VGS = 10 V ** ID = 3 A, VDS = 20 V ** VDS = 50 V, VGS = 0, f = 1 MHz VDS = 50 V, VGS = 0, f = 1 MHz VDS = 50 V, VGS = 0, f = 1 MHz *: Push−Pull Operation **: Pulse Test This transistor is the electr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)