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BSD235N

Infineon Technologies
Part Number BSD235N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalan...
Datasheet PDF File BSD235N PDF File

BSD235N
BSD235N

Overview
OptiMOS™2 Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Super Logic level (2.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 BSD235N Product Summary VDS RDS(on),max ID VGS=4.
5 V VGS=2.
5 V 20 V 350 mW 600 0.
95 A PG-SOT-363 65 4 1 23 Type Package Tape and Reel Information BSD235N PG-SOT-363 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking X6s Lead Free Yes Packing Non dry Value 0.
95 0.
76 3.
8 Unit A Avalanche energy, single pulse E AS I D=0.
95 A, R GS=16 W 1.
6 mJ Reverse diode dv /dt dv /dt I D=0.
95 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation Operating and storage temperature V GS P tot T A=25 °C T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 (1) Remark: only one of both transistors in operation.
6 ±12 0.
5 -55 .
.
.
150 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.
5 page 1 2014-07-29 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSD235N min.
Values typ.
Unit max.
R thJA minimal footprint(2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=VGS, I D=1.
6 µA I DSS V DS=20 V, V GS=0 V, T j=25 °C I GSS V DS=20 V, V GS=0 V, T j=150 °C V GS=12 V, V DS=0 V 20 0.
7 - - Drain-source on-state resistance R DS(on) V GS=2.
5 V, I D=0.
29 A - 0.
95 - 415 -V 1.
2 1 mA 100 100 nA 600 mW V GS=4.
5 V, I D=0.
95 A - 266 350 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.
76 A 2 -S 2) Performed on 40 mm2 FR4 PCB.
The trac...


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