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BSL302SN

Infineon Technologies
Part Number BSL302SN
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS®2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated •...
Datasheet PDF File BSL302SN PDF File

BSL302SN
BSL302SN


Overview
OptiMOS®2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.
5V rated) • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 BSL302SN Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.
5 V 30 V 25 mW 38 7.
1 A PG-TSOP-6 6 5 4 1 2 3 Type Package Tape and Reel Information BSL302SN PG-TSOP-6 H6327 = 3000 pcs.
/ reel Marking sPE Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID I D,pulse E AS T A=25 °C T A=70 °C T A=25 °C I D=7.
1 A, R GS=25 W Reverse diode dv /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class dv /dt I D=7.
5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114-HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Lead Free Packing Yes Non dry Value 7.
1 5.
7 28 30 6 ±20 2 -55 .
.
.
150 0 (0V to 250V) 260 °C 55/150/56 Unit A mJ kV/µs V W °C 2.
0 page 1 2014-01-09 Parameter Thermal characteristics Thermal resistance, junction - minimal footprint SMD version, device on PCB Symbol Conditions BSL302SN min.
Values typ.
Unit max.
R thJS R thJA minimal footprint 6 cm2 cooling area1) - - - 50 K/W - 230 - 62.
5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=VGS, I D=30 µA I DSS V DS=20 V, V GS=0 V, T j=25 °C V DS=20 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=5.
7 A V GS=10 V, I D=7.
1 A g fs |V DS|>2|I D|R DS(on)max, I D=7.
1 A 30 1.
2 - - 1.
70 - 27 18 16 -V 2 1 mA 100 100 nA 38 mW 25 -S 1) Device on 40 mm x 40 mm x 1.
5 mm...



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