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BSR606N

Infineon Technologies
Part Number BSR606N
Manufacturer Infineon Technologies
Description Small-Signal-Transistor
Published May 30, 2015
Detailed Description OptiMOS™-3 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated ...
Datasheet PDF File BSR606N PDF File

BSR606N
BSR606N

Overview
OptiMOS™-3 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.
5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; Halogen-free; RoHS compliant BSR606N Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.
5 V 60 V 60 mW 90 2.
3 A PG-SC59 3 1 2 Type Package BSR606N PG-SC59 Tape and Reel Information H6327: 3000 pcs/ reel Marking HalogenLIs Yes Package Non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C 2.
3 1.
8 9.
1 Avalanche energy, single pulse E AS I D=2.
3 A, R GS=25 W 20 Unit A mJ Reverse diode dv /dt dv /dt I D=2.
3 A, V DS=48 V, di /dt =100 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation 1) P tot T A=25 °C Operating and storage temperature T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Value refers to minimum footprint Rev 2.
3 page 1 6 kV/µs ±20 0.
5 -55 .
.
.
150 class 0 (<250V) 260 °C 55/150/56 V W °C 2013-05-02 Parameter Thermal characteristics SMD version, device on PCB Symbol Conditions BSR606N min.
Values typ.
Unit max.
R thJA minimal footprint2) - - 250 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=0 V, I D=15 µA I DSS V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=4.
5 V, I D=1.
1 A V GS=10 V, I D=2.
3 A g fs |V DS|>2|I D|R DS(on)max, I D=1.
8 A 60 1.
3 - - - -V 1.
8 2.
3 - 1 mA - 100 - 100 nA 63 90 mW 45 60 5.
4 - S 2) Performed on 40mm2 FR4 PCB.
The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both sides of the PCB.
Rev ...


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