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IPG20N10S4L-35A

Infineon Technologies
Part Number IPG20N10S4L-35A
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 30, 2015
Detailed Description OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
Datasheet PDF File IPG20N10S4L-35A PDF File

IPG20N10S4L-35A
IPG20N10S4L-35A

Overview
OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N10S4L-35A Product Summary VDS RDS(on),max4) ID 100 V 35 mΩ 20 A PG-TDSON-8-10 Type IPG20N10S4L-35A Package PG-TDSON-8-10 Marking 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 17 80 60 15 ±16 43 -55 .
.
.
+175 Unit A mJ A V W °C Rev.
1.
0 page 1 2013-03-04 IPG20N10S4L-35A Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min.
Values typ.
Unit max.
- - 3.
5 K/W - 100 - 60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current4) Gate-source leakage current4) Drain-source on-state resistance4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D= 16µA I DSS V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C2) I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.
5 V, I D=10 A V GS=10 V, I D=17 A 100 1.
1 - - 1.
6 0.
01 1 38 29 -V 2.
1 1 µA 100 100 nA 45 mΩ 35 Rev.
1.
0 page 2 2013-03-04 IPG20N10S4L-35A Parameter Dynamic characteristics2) Input capacitance4) Output capacitance4) Reverse transfer capacitance4) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2,...


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