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IPG16N10S4-61

Infineon Technologies
Part Number IPG16N10S4-61
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 30, 2015
Detailed Description IPG16N10S4-61 OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualifi...
Datasheet PDF File IPG16N10S4-61 PDF File

IPG16N10S4-61
IPG16N10S4-61

Overview
IPG16N10S4-61 OptiMOS™-T2 Power-Transistor Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary V DS R 3) DS(on),max ID 100 V 61 mW 16 A PG-TDSON-8-4 Type IPG16N10S4-61 Package Marking PG-TDSON-8-4 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V1) I D,pulse - E AS I AS V GS I D=8A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 16 11 64 33 10 ±20 29 -55 .
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+175 Unit A mJ A V W °C Rev.
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0 page 1 2011-11-29 IPG16N10S4-61 Parameter Symbol Conditions Thermal characteristics1...


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