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APT68GA60S

Microsemi
Part Number APT68GA60S
Manufacturer Microsemi
Description High Speed PT IGBT
Published Jun 2, 2015
Detailed Description APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is...
Datasheet PDF File APT68GA60S PDF File

APT68GA60S
APT68GA60S

Overview
APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the TO-247 APT68GA60S D3PAK poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B when switching at high frequency.
Single die IGBT FEATURES • Fast switching with low EMI • Very Low Eoff for maximum efficiency • Ultra low Cres for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Parameter Ratings Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Collector Emitter Voltage Continuous Collector Current @ TC = 25°C 7 Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.
063" from Case for 10 Seconds 600 121 68 202 ±30 520 202A @ 600V -55 to 150 300 Static Characteristics Symbol Parameter TJ = 25°C unless otherwise specifi ed Test Conditions Min Typ Max VBR(CES) VCE(on) VGE(th) ICES IGES Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current VGE = 0V, IC = 1.
0mA VGE = 15V, TJ = 25°C IC = 40A TJ = 125°C VGE =VCE , IC = 1mA VCE = 600...


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