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IXTP18P10T

IXYS
Part Number IXTP18P10T
Manufacturer IXYS
Description Power MOSFETs
Published Jun 6, 2015
Detailed Description TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR V...
Datasheet PDF File IXTP18P10T PDF File

IXTP18P10T
IXTP18P10T

Overview
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings -100 -100 V V ±15 V ±25 V -18 A - 60 A -18 A 200 mJ 83 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 260 1.
13 / 10 °C °C Nm/lb.
in.
0.
35 g 2.
50 g 3.
00 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS V...


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