DatasheetsPDF.com

AM4407

AiT Semiconductor
Part Number AM4407
Manufacturer AiT Semiconductor
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4407 is the P-Ch...
Datasheet PDF File AM4407 PDF File

AM4407
AM4407

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
FEATURES  30V/-12.
0A, RDS(ON) = 12mΩ(typ)@VGS =-10V  -30V/-7.
5A, RDS(ON) = 19mΩ(typ)@VGS =-4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  Available in SOP8 Package These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
The AM4407 is available in SOP8 Package APPLICATION  High Frequency Point-of-Load Synchronous  New working DC-DC Power System  Load Switch ORDERING INFORMATION P CHANNEL MOSFET Package Type Part Number SOP8 AM4407M8R M8 AM4407M8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package REV1.
0 - SEP 2010 RELEASED – -1- AiT Semiconductor Inc.
www.
ait-ic.
com PIN DESCRIPTION AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Top View Symbol S S S G D D D D Source Source Source Gate Drain Drain Drain Drain Function THERMAL INFORMATION Parameter Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case Symbol RθJA RθJC Max Unit 85 °C/W 28 °C/W REV1.
0 - SEP 2010 RELEASED – -2- AiT Semiconductor Inc.
www.
ait-ic.
com AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS=10VNOTE1 TA=25°C 12A IDM, Pulsed Drain CurrentNOTE2 30A PD, Power Dissipation TA=25°C 3.
2W TA=70°C 2W TJ, Operation Junction Temperature -55/150°C TSTG, Storage Temperature Range -55/150°C ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)