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AM4435

AiT Semiconductor
Part Number AM4435
Manufacturer AiT Semiconductor
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com   AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM443...
Datasheet PDF File AM4435 PDF File

AM4435
AM4435

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com   AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4435 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Advanced trench    -30V/-8.
0A, RDS(ON)=16mΩ(typ)@VGS =-10V -30V/-5.
0A, RDS(ON)=26mΩ(typ)@VGS =-4.
5V Super high density cell design for extremely low technology to provide excellent RDS(ON).
RDS(ON)  Exceptional on-resistance and maximum DC These devices are particularly suited for low current capability voltage application such as cellular phone and  Full RoHS compliance notebook computer power management and other  Available in SOP8 Package batter powered circuits where high-side switching.
APPLICATION The AM4435 is available in SOP8 Package ORDERING INFORMATION Package Type Part Number SOP-8 AM4435M8R M8 AM4435M8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package  Inverter  Synchronous Buck  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter P-CHANNEL MOSFET REV1.
0   - JUN 2010 RELEASED – -1- AiT Semiconductor Inc.
www.
ait-ic.
com   PIN DESCRIPTION AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Top View Source Source Source Gate Drain Drain Drain Drain Function REV1.
0   - JUN 2010 RELEASED – -2- AiT Semiconductor Inc.
www.
ait-ic.
com   AM4435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specified VDSS, Drain-Source Voltage -30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current (TJ=150℃) VGS = -10V -9A IDM, Pulsed Drain Current -30A IS, Continuous Source Current (Diode Conduction) -2.
3A TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ PD, Power Dissipation TA=25oC 2.
8W TA=70oC 1.
8W Stresses above may cau...


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