DatasheetsPDF.com

AM4920

AiT Semiconductor
Part Number AM4920
Manufacturer AiT Semiconductor
Description 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4...
Datasheet PDF File AM4920 PDF File

AM4920
AM4920

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4920 is the Dual N-Channel logic  enhancement mode power field effect transistor is  produced using high cell density.
Advanced trench  technology to provide excellent RDS(ON).
 The device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous  buck converter applications.
30V / 7.
8A, RDS(ON) =16mΩ (typ.
)@VGS=10V 30V / 5.
8A, RDS(ON) =28mΩ (typ.
)@VGS=4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in SOP8 package The AM4920 is available in SOP8 Package ORDERING INFORMATION APPLICATIONS  High Frequency Point-of-Load Synchronous  New working DC-DC Power System  Load Switch Package Type Part Number SOP8 AM4920M8R M8 AM4920M8VR Note V: Halogen free Package R: Tape & Reel AiT provides all RoHS products Suffix “ V “ means Halogen free Package N- CHANNEL MOSFET REV1.
1 - OCT 2010 RELEASED, JAN 2015 UPDATED - -1- AiT Semiconductor Inc.
www.
ait-ic.
com PIN DESCRIPTION AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Top View Function Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 REV1.
1 - OCT 2010 RELEASED, JAN 2015 UPDATED - -2- AiT Semiconductor Inc.
www.
ait-ic.
com AM4920 MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃ Unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current TA =25℃ 7.
8A (VGS=10V NOTE1) TA =70℃ 6A IDM, Pulsed Drain Current NOTE2 25A EAS, Single Pulse Avalanche Energy L=0.
1mH NOTE3 27mJ IAS, Avalanche Current 14A PD, Power Dissipation TA =25℃ TA =70℃ 2.
0W 1.
4W TJ, Operation Junction Temperature -55℃~150℃ TSTG, Storage Temperature Range -55℃~150℃ Stresses above may cause permanent damage to the device.
T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)