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AM8958

AiT Semiconductor
Part Number AM8958
Manufacturer AiT Semiconductor
Description N+P PAIR ENHANCEMENT MODE MOSFET
Published Jun 6, 2015
Detailed Description AiT Semiconductor Inc. www.ait-ic.com   AM8958 MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is t...
Datasheet PDF File AM8958 PDF File

AM8958
AM8958

Overview
AiT Semiconductor Inc.
www.
ait-ic.
com   AM8958 MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed.
The AM8958 is available in SOP8 Package N-Channel  30V /6.
8A, RDS(ON) = 23mΩ(typ.
)@VGS = 10V  30V /6.
5A, RDS(ON) = 34mΩ(typ.
)@VGS = 4.
5V P-Channel  -30V / -6.
5A, RDS(ON) = 35mΩ(typ.
)@VGS = -10V  -30V / -4.
4A, RDS(ON) = 60mΩ(typ.
)@VGS = -4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package APPLICATION ORD...


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