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NCE1505S

NCE Power Semiconductor
Part Number NCE1505S
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jun 6, 2015
Detailed Description http://www.ncepower.com Pb Free Product NCE1505S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1505S ...
Datasheet PDF File NCE1505S PDF File

NCE1505S
NCE1505S


Overview
http://www.
ncepower.
com Pb Free Product NCE1505S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE1505S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =150V,ID =5.
2A RDS(ON) < 44mΩ @ VGS=10V (Typ:31mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Low Gate to Drain Charge to Reduce Switching Losses Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% ΔVds TESTED! SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 1505 NCE1505S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current(Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range ID (100℃) IDM PD TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Limit 150 ±20 5.
2 3.
7 42 3.
5 -55 To 150 Unit V V A A A W ℃ 35.
7 ℃/W Min Typ Max Unit Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE1505S Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gat...



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