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HFS640

SemiHow
Part Number HFS640
Manufacturer SemiHow
Description 200V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFS640 Nov 2005 HFS640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18* A FEATURES ‰ Originative New...
Datasheet PDF File HFS640 PDF File

HFS640
HFS640

Overview
HFS640 Nov 2005 HFS640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18* A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 37 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 200 18* 11.
4* 72* ρͤ͑͡ 250 18.
0 13.
9 5.
5 PD Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 43 0.
35 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
2.
89 62.
5 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ Units ఁ͠Έ͑ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡ HFS640 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 9.
0 A͑ 2.
0 -- 4.
0 -- 0.
145 0.
18 V ‫͑ש‬ Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝΃...


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