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HFP35N75

SemiHow
Part Number HFP35N75
Manufacturer SemiHow
Description 75V N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP35N75 Dec 2008 HFP35N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35 A FEATURES  Originative New ...
Datasheet PDF File HFP35N75 PDF File

HFP35N75
HFP35N75

Overview
HFP35N75 Dec 2008 HFP35N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
024 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 75 35 25 140 ±30 580 35 12 5.
5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperatur...


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