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HFS35N75

Part Number	HFS35N75
Manufacturer	SemiHow
Description	75V N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFS35N75 Dec 2008 HFS35N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ Pȍ ID = 35 A FEATURES Originative New ...
Datasheet	HFS35N75 PDF File

Overview

HFS35N75 Dec 2008 HFS35N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ Pȍ ID = 35 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 75 35* 25* 140* ρ30 580 35 12 5.
5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 40 0.
32 -55 to +175 300 Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
3.
75 62.
5 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Units ୅/W క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͩ͡͡ HFS35N75 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 17.
5 A 2.
0 -- 4.
0 -- 0.
024 0.
03 V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 75 -- -- V ǻBVDSS Breakdown Voltage Temperature /ǻTJ Coefficient ID = 250 Ꮃ, Referenced to25୅ -- 0.
06 -- V/୅ IDSS Zero Gate Voltage Drain Current VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 150୅ -- -- 1 Ꮃ -- -- 10 Ꮃ IGSSF Gate-Body Leakag...

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HFS35N75 75V N-Channel MOSFET - SemiHow

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