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HFI9N50

SemiHow
Part Number HFI9N50
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A FEAT...
Datasheet PDF File HFI9N50 PDF File

HFI9N50
HFI9N50

Overview
HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.
58 Ω ID = 9.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
58 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW9N50 HFI9N50 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) –...


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