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HFH18N50S

Part Number	HFH18N50S
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A FEATURES Originati...
Datasheet	HFH18N50S PDF File

Overview

HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.
220ȍ ID = 19 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
220 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed ...

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HFH18N50S N-Channel MOSFET - SemiHow

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