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HFS8N60S

SemiHow
Part Number HFS8N60S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFS8N60S Dec 2006 HFS8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A FEATURES ‰ Originativ...
Datasheet PDF File HFS8N60S PDF File

HFS8N60S
HFS8N60S

Overview
HFS8N60S Dec 2006 HFS8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.
5 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 7.
5* 4.
6* 30* ρ30 230 7.
5 14.
7 4.
5 PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ TJ, TSTG Operating and Storag...


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