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HFW5N65S

Part Number	HFW5N65S
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A FE...
Datasheet	HFW5N65S PDF File

Overview

HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.
2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW5N65S HFI5N65S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ...

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