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HFI5N65S

SemiHow
Part Number HFI5N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.2 A FE...
Datasheet PDF File HFI5N65S PDF File

HFI5N65S
HFI5N65S

Overview
HFW5N65S_HFI5N65S Mar 2010 HFW5N65S / HFI5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 4.
2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.
5 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW5N65S HFI5N65S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 4.
2 2.
4 16.
8 ρ30 180 4.
2 10 4.
5 PD TJ, TSTG TL Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚ - Derate above 25ഒ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 3.
13 100 0.
8 -55 to +150 300 Units 9 $ $ $ 9 P$ P- 9QV : : :ഒ ഒ ഒ Thermal Resistance Characteristics Symbol RșJC RșJA RșJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ.
---- Max.
1.
25 40 62.
5 Units ഒ: క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣ͑ͣ͢͡͡ HFW5N65S_HFI5N65S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 2.
1 A 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Revers...


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