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HFC1N70

SemiHow
Part Number HFC1N70
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFC1N70 Dec 2008 HFC1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.5 A FEATURES  Originative ...
Datasheet PDF File HFC1N70 PDF File

HFC1N70
HFC1N70

Overview
HFC1N70 Dec 2008 HFC1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.
0 Ω ID = 0.
5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 14.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-126 1 23 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperat...


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