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HFG1N80

SemiHow
Part Number HFG1N80
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technol...
Datasheet PDF File HFG1N80 PDF File

HFG1N80
HFG1N80

Overview
HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.
) @VGS=10V Preliminary Aug 2008 BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.
0 A TO-92L 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 1.
0 0.
63 4.
0 ±30 90 1.
0 4.
5 4.
0 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ ...


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