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HFH13N80

Part Number	HFH13N80
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Jun 7, 2015
Detailed Description	HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES  Originati...
Datasheet	HFH13N80 PDF File

Overview

HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.
77 Ω ID = 12.
6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 68 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 0.
77 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (N...

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HFH13N80 N-Channel MOSFET - SemiHow

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