DatasheetsPDF.com

TH58NVG4S0FTA20

Part Number	TH58NVG4S0FTA20
Manufacturer	Toshiba Semiconductor
Description	16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Published	Jun 7, 2015
Detailed Description	TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPT...
Datasheet	TH58NVG4S0FTA20 PDF File

Overview

TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0F is a single 3.
3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 14.
5 Kbytes: 4328 bytes × 64 pages).
The TH58NVG4S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile me...

Similar Datasheet

TH58NVG4S0FTA20 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM - Toshiba Semiconductor
TH58NVG4S0FTAK0 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)