DatasheetsPDF.com

NCE20N50

NCE Power Semiconductor
Part Number NCE20N50
Manufacturer NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Published Jun 8, 2015
Detailed Description NCE20N50,NCE20N50F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super ...
Datasheet PDF File NCE20N50 PDF File

NCE20N50
NCE20N50

Overview
NCE20N50,NCE20N50F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON) ID 560 190 20 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20N50 TO-220 NCE20N50 NCE20N50F TO-220F NCE20N50F Table 1.
Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note 2) Avalanche current(Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR TO-220 TO-220F NCE20N50 NCE20N50F 500 ±30 20 20* 12.
5 12.
5* 60 60* 50 208 34.
5 1.
67 0.
28 690 20 Unit V V A A A V/ns W W/°C mJ A Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 http://www.
ncepower.
com v1.
2 NCE20N50,NCE20N50F Parameter Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Operating Junction and Storage Temperature Range * limited by maximum junction temperature Table 2.
Thermal Characteristic Parameter Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum） Symbol EAR TJ,TSTG Symbol RthJC RthJA NCE20N50 NCE20N50F 1 -55.
.
.
+150 Unit mJ °C NCE20N50 0.
6 62 NCE20N50F 3.
6 80 Unit °C /W °C /W Table 3.
Electrical ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)