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C3329

Toshiba
Part Number C3329
Manufacturer Toshiba
Description 2SC3329
Published Jun 8, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recom...
Datasheet PDF File C3329 PDF File

C3329
C3329

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers 2SC3329 Unit: mm · Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.
6 nV/Hz1/2 (typ.
) · Low pulse noise.
Low 1/f noise · Low base spreading resistance: rbb’ = 2.
0 Ω (typ.
) · Complementary to 2SA1316 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 100 20 400 125 -55~125 Electrical Characteristics (Ta = 25°C) Unit V V V mA mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.
21 g (typ.
) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain...


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