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C4322

Toshiba
Part Number C4322
Manufacturer Toshiba
Description 2SC4322
Published Jun 9, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 2SC4322 VHF~UHF Band Low Noise Amplifier Applications Un...
Datasheet PDF File C4322 PDF File

C4322
C4322

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 2SC4322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain.
· NF = 1.
8dB, |S21e|2 = 7.
5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 1.
5 7 15 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 6 V, IC = 7 mA VCE = 6 V, IC = 7 mA, f = 1 GHz VCE = 6 V, IC = 7 mA, f = 2 GHz VCE = 6 V, IC = 3 mA, f = 1 GHz VCE = 6 V, IC = 3 mA, f = 2 GHz Min Typ.
Max Unit 7 10 ¾ GHz ¾ 13 ¾ dB 4.
5 7.
5 ¾ ¾ 1.
4 ¾ dB ¾ 1.
8 3.
0 Electrical Ch...


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