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C4781

Part Number	C4781
Manufacturer	Toshiba
Description	2SC4781
Published	Jun 10, 2015
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Medium Power Amplifier App...
Datasheet	C4781 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications 2SC4781 Unit: mm • High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.
) (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 4 A, IB = 80 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 30 30 10 6 4 8 0.
8 900...

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